MOSFET Vishay SQJ461EP-T1_GE3

MOSFET Vishay SQJ461EP-T1_GE3

Overview:

Vishay SQJ461EP-T1_GE3 is a P-channel MOSFET ( a type of Transistor ) featuring high-current handling, low on-resistance, reduced heat generation, and more, making it suitable for automotive applications.

Key Features:

• It features a 60 V Drain to Source Voltage and 30A (Tc) Current - Continuous Drain (Id) @ 25°C. 

• It supports 4.5V and 10V Drive Voltage (Max Rds On, Min Rds On). 

• 16 mΩ (typically specified) on-state resistance, ±20 V Gate-Source Voltage, and 90 nC (or 0.14 µC as pulsed gate charge) are also some highlighted features of SQJ461EP-T1_GE3 Vishay MOSFET. 

Advantages of Deploying Vishay Power MOSFET:

High Current Rating:

This MOSFET is designed to handle high current levels, capable of handling as high as 30A (Tc) Current - Continuous Drain (Id) @ 25°C. It should be noted that ambient temperature and power dissipation play a role in determining the Current Continuous Drain.

Low On-Resistance:

It features a mere 16m Ohm @ 14.4A, 10V Rds On (Max) @ Id, Vgs, which is significantly lower. The lower resistance means this MOSFET power semiconductor ensures less power loss during operation.

Versatile Applications:

This surface-mount MOSFET can be deployed for various devices. SQJ461EP-T1_GE3 is therefore ranked as the best MOSFET for power supply, MOSFET for motor control, MOSFET for switching applications, MOSFET for DC-DC converters, MOSFET for voltage regulators, MOSFET for automotive electronics, MOSFET for industrial applications, and more.

Wide-Ranging Operating Temperature:

This P-channel MOSFET is capable of delivering optimum performance at a temperature ranging from -55°C ~ 175°C (TJ), making it suitable for various application scenarios.

Technical Specs:

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